SavantIC Semiconductor Product Specification 2SD325 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type 2SB511 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 35 V VCEO Collector-emitter voltage Open base 35 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 1.5 A ICM Collector current -peak 3.0 A PC Collector dissipation Ta=25 1.75 TC=25 10 W Tj Junction temperature 150 Tstg Storage temperature -50~150 SavantIC Semiconductor Product Specification 2SD325 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 40 hFE-2 DC current gain IC=0.1A ; VCE=2V 35 Transition frequency IC=0.5A ; VCE=5V fT CONDITIONS hFE-1 Classifications C D E F 40-80 60-120 100-200 160-320 2 MIN TYP. MAX 35 UNIT V 320 8 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 2SD325