SavantIC Semiconductor Product Specification 2SD388 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 140 V VEBO Emitter-base voltage Open collector 7 V 8 A 80 W IC Collector current PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD388 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 140 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 2.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=0.6A 2.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 50 hFE-2 DC current gain IC=5A ; VCE=5V 20 Transition frequency IC=1A ; VCE=10V fT CONDITIONS 2 MIN TYP. 9 MAX UNIT MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD388