SAVANTIC 2SD546

SavantIC Semiconductor
Product Specification
2SD546
Silicon NPN Power Transistors
DESCRIPTION
·With TO-66 package
·High breakdown voltage
APPLICATIONS
·Converters
·Inverters
·Switching regulators
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
800
V
VCEO
Collector-emitter voltage
Open base
500
V
VEBO
Emitter-base voltage
Open collector
6
V
1
A
30
W
IC
Collector current
PC
Collector power dissipation
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
SavantIC Semiconductor
Product Specification
2SD546
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=30mA ;IB=0
500
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA ;IC=0
6
V
VCEsat
Collector-emitter saturation voltage
IC=500mA; IB=100mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=500mA; IB=100mA
1.5
V
ICBO
Collector cut-off current
VCB=800V; IE=0
0.1
mA
IEBO
Emitter cut-off current
VEB=6V; IC=0
0.1
mA
hFE
DC current gain
IC=20mA ; VCE=10V
Transition frequency
IC=0.1A ; VCE=10V
fT
CONDITIONS
2
MIN
TYP.
40
MAX
UNIT
200
7
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions
3
2SD546