SavantIC Semiconductor Product Specification 2SD551 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2SB681 ·Wide area of safe operation APPLICATIONS ·For audio frequency power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 12 A ICM Collector current-peak 15 A PC Collector power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SD551 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 150 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V Collector-emitter saturation voltage IC=5A; IB=0.5A 2.5 V VBE Base-emitter on voltage IC=1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=150V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 40 hFE-2 DC current gain IC=6A ; VCE=5V 20 COB Collector output capacitance IE=0; VCB=10V;f=1MHz 250 pF Transition frequency IC=1A ; VCE=5V 15 MHz VCEsat fT CONDITIONS hFE Classifications O R 40-80 70-140 2 MIN TYP. MAX UNIT 140 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD551