SavantIC Semiconductor Product Specification 2SD627 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage,high speed APPLICATIONS ·For use in horizontal deflection output stages for color TV receivers PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 600 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 3 A ICM Collector current-peak 6 A PC Collector power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -45~150 TC=25 SavantIC Semiconductor Product Specification 2SD627 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 VCEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A 10 V VBEsat Base-emitter saturation voltage IC=2.5A; IB=0.6A 1.6 V ICBO Collector cut-off current VCB=1000V; IE=0 50 µA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=2A ; VCE=10V Fall time ICP=2.5A tf CONDITIONS 2 MIN TYP. MAX 600 5 UNIT V 25 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SD627