SavantIC Semiconductor Product Specification 2SD870 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·For color TV horizontal output applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-collector voltage Open base 600 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 5 A IE Emitter current -5 A PT Total power dissipation 50 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification 2SD870 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)EBO PARAMETER CONDITIONS MIN TYP. MAX Emitter-base breakdown voltage IE=200m A;IC=0 VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=4 A;IB=0.8 A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 µA hFE DC current gain IC=1A ; VCE=5V VF Diode forward voltage IF=5A 2.0 V fT Transition frequency IC=0.1A ; VCE=10V Collector output capacitance IE=0 ; VCB=10V;f=1MHz Fall time IC=4A;IB1end=0.8A COB tf 2 5 UNIT V 8 3 MHz 165 pF 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SD870