SavantIC Semiconductor Product Specification BD318 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High DC current gain ·Excellent safe operating area ·Complement to type BD317 APPLICATIONS ·Designed for high power amplifiers PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -16 A ICM Collector current(peak) -20 A IB Base current -5 A PT Total power dissipation 200 W Tj Junction temperature -65~200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 0.875 /W SavantIC Semiconductor Product Specification BD318 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -1.0 V VBEsat Base-emitter saturation voltage IC=-8A ;IB=-0.8A -1.8 V VBE(on) Base-emitter on voltage IC=-8A ;VCE=-2.0V -1.5 V ICBO Collector cut-off current VCB=100V;IE=0 -1.0 mA IEBO Emitter cut-off current VEB=-7V; IC=0 -1.0 mA hFE-1 DC current gain IC=-5A ; VCE=-4V 25 hFE-2 DC current gain IC=-10A ; VCE=-4V 15 Transition frequency IC=-1A ; VCE=-20V,f=0.2MHz 1 fT CONDITIONS 2 MIN TYP. MAX -100 UNIT V MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD318