SavantIC Semiconductor Product Specification BD895A/897A/899A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD896A/898A/900A ·DARLINGTON APPLICATIONS ·For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BD895A VCBO VCEO Collector-base voltage Collector-emitter voltage BD897A Open emitter Emitter-base voltage IC Collector current-DC IB Base current PT Total power dissipation 60 BD899A 80 BD895A 45 BD897A UNIT 45 Open base BD899A VEBO VALUE 60 V V 80 Open collector 5 V 8 A 300 mA TC=25 70 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BD895A/897A/899A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD895A V(BR)CEO Collector-emitter breakdown voltage BD897A VBE ICBO ICEO TYP. MAX UNIT 45 IC=100mA, IB=0 V 60 80 BD899A VCEsat MIN Collector-emitter saturation voltage IC=4A ,IB=16mA 2.8 V Base-emitter on voltage IC=4A ; VCE=3V 2.5 V BD895A VCB=45V, IE=0 TC=100 0.2 2.0 BD897A VCB=60V, IE=0 TC=100 0.2 2.0 BD899A VCB=80V, IE=0 TC=100 0.2 2.0 BD895A VCE=30V, IB=0 BD897A VCE=30V, IB=0 BD899A VCE=40V, IB=0 Collector cut-off current Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE DC current gain IC=4A ; VCE=3V VEC Diode forward voltage IE=8A ton Turn-on time toff Turn-off time IC=3A ; IB1=-IB2=12mA VBE=-3.5V;RL=10B;tp=20µs mA 0.5 mA 2 mA 3.5 V 750 1 µs 5 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.79 /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BD895A/897A/899A