SAVANTIC BDX65C

SavantIC Semiconductor
Product Specification
BDX65C
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·DARLINGTON
·Complement to type BDX64C
APPLICATIONS
·Designed for power amplification and
switching applications.
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
120
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
12
A
ICM
Collector current(peak)
16
A
IB
Base current
0.2
A
PT
Total power dissipation
117
W
Tj
Junction temperature
-55~200
Tstg
Storage temperature
-55~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.5
UNIT
/W
SavantIC Semiconductor
Product Specification
BDX65C
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0;L=25mH
VCEsat
Collector-emitter saturation voltage
IC=5A ;IB=20mA
2
V
VBE
Base-emitter voltage
IC=5A;VCE=3V
3
V
ICBO
Collector cut-off current
VCB=120V; IE=0
TC=150
0.4
3
mA
ICEO
Collector cut-off current
VCE=60V; IB=0
1
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
5
mA
VF
Diode forward voltage
IF=3A
hFE-1
DC current gain
IC=1A ; VCE=3V
hFE-2
DC current gain
IC=5A ; VCE=3V
hFE-3
DC current gain
IC=10A ; VCE=3V
1500
Transition frequency
IC=5A ; VCE=3V
7
fT
CONDITIONS
MIN
TYP.
120
UNIT
V
1.8
2
MAX
V
1500
1000
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BDX65C