SavantIC Semiconductor Product Specification BDX78 Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BDX77 APPLICATIONS ·Medium power switching ·Amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current (DC) -8 A ICM Collector current-Peak tp=10ms -12 A IB Base current -3 A 60 W Ptot Total power dissipation Tmb=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE UNIT 70 K/W SavantIC Semiconductor Product Specification BDX78 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-0.2A; IB=0 -80 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -100 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat-1 Collector-emitter saturation voltage IC=-3A; IB=-0.3A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-6A; IB=-0.6A -1.5 V Base-emitter saturation voltage IC=-6A; IB=-0.6A -2.0 V VBE Base-emitter on voltage IC=-3A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-40V; IE=0 -0.1 mA ICEO Collector cut-off current VCE=-30V; IB=0 -0.2 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.5 mA fT Transition frequency IC=-0.3A ; VCE=-3V 7 DC current gain IC=-1A ; VCE=-2V 30 VBEsat hFE CONDITIONS MIN TYP. MAX UNIT MHz Switching times ton Turn-on time toff Turn-off time 1.0 µs 2.0 µs IC=2A IB1=-IB2=0.2A 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX78