SavantIC Semiconductor Product Specification BDY56 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High current capability ·Fast switching speed APPLICATIONS ·LF large signal power amplification. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 150 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A IB Base current 7 A PT Total power dissipation 117 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification BDY56 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 2.5 V VBE Base-emitter on voltage IC=4 A; VCE=4V 1.8 V ICEX Collector cut-off current VCE=150V; VBE=-1.5V TC=150 3.0 30 mA ICEO Collector cut-off current VCE=60V; IB=0 0.5 mA IEBO Emitter cut-off current VEB=7V; IC=0 3.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 20 hFE-2 DC current gain IC=10A ; VCE=4V 10 Transition frequency IC=10A ; VCE=4V 10 fT CONDITIONS 2 MIN TYP. MAX 120 UNIT V 70 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDY56