SavantIC Semiconductor Product Specification BU208D Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Built-in damper diode ·High voltage capability APPLICATIONS ·For use in horizontal deflection output stages for color TV receives. PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current 8 A ICM Collector current-peak 15 A PT Total power dissipation 150 W Tj Junction temperature 175 Tstg Storage temperature -65~175 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX UNIT 1.0 K/W SavantIC Semiconductor Product Specification BU208D Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS Collector-emitter sustaining voltage IC=0.1A; IB=0; VCEsat Collector-emitter saturation voltage IC=4.5 A;IB=2 A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5 A;IB=2 A 1.3 V ICES Collector cut-off current VCE=1500V;VBE=0 Tj=125 1.0 2.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 300 mA hFE DC current gain IC=1A ; VCE=5V VF Diode forward voltage IF=4A 2.0 V fT Transition frequency IC=0.1A ; VCE=5V ts Storage time 700 UNIT V 8 7 MHz 7 µs 0.55 µs IC=4.5A;IB=1.8A;VCC=140V LC=0.9Mh;LB=3µH tf Fall time 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BU208D