SavantIC Semiconductor Product Specification BU408 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ·Fast switching speed APPLICATIONS ·For use in horizontal deflection output stages of TV’s and CTV’s circuits PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 200 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 7 A ICM Collector current (Pulse) 10 A IB Base current 4 A PC Collector power dissipation 60 W Tj Junction temperature 150 Tstg Storage temperature -55-150 TC=25 SavantIC Semiconductor Product Specification BU408 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0 VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A 1.0 V VBEsat Base-emitter saturation voltage IC=6A; IB=1.2A 1.5 V hFE DC current gain IC=2A ; VCE=5V ICES Collector cut-off current VCE=250V; VBE=0 TC=150 0.1 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1 mA fT Transition frequency IC=0.5A ; VCE=10V toff Turn-off time IC=6A ; IB=1.2A 2 MIN TYP. MAX 200 UNIT V 40 10 MHz 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm) 3 BU408