SavantIC Semiconductor Product Specification BU505DF Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage,high speed ·Built-in damper diode. APPLICATIONS ·For horizontal deflection circuits of color TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 5 V 2.5 A IC Collector current ICM Collector current (peak) 4 A IB Base current 2 A IBM Base current(peak) 4 A Ptot Total power dissipation 20 W Tj Tstg TC=25 Max.operating junction temperature Storage temperature 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient MAX UNIT 55 K/W SavantIC Semiconductor Product Specification BU505DF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=0.1 A ;IB=0;L=25mH 700 V(BR)EBO Emitter-base breakdown voltage IE=600mA ;IC=0 7.5 VCEsat Collector-emitter saturation voltage IC=2A ;IB=0.9 A 1.0 V VBEsat Base-emitter saturation voltage IC=2A ;IB=0.9 A 1.3 V ICES Collector cut-off current VCE =1500V;VBE=0; TC=125 0.15 1.0 mA hFE-1 DC current gain IC=0.1A ;VCE=5V hFE-2 DC current gain IC=2A ;VCE=5V VF Diode forward voltage IF=2A fT Transition frequency IC=0.1A ;VCE=5V 7 MHz CC Collector output capacitance IE=0;f=1MHz;VCB=10V 65 pF V 13.5 6 V 30 2.22 1.8 2 UNIT V SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 BU505DF