SAVANTIC BU508DFI

SavantIC Semiconductor
Product Specification
BU508DFI
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PML package
·High voltage,high speed
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of colour TV receivers.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
8
A
ICP
Collector current (Pulse)
15
A
Ptot
Total power dissipation
50
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
BU508DFI
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA ;IB=0
VCEsat
Collector-emitter saturation voltage
IC=4.5A ;IB=2A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=4.5A ;IB=2A
1.3
V
ICES
Collector cut-off current
VCE=1500V, VBE=0
Tj=125
1.0
2.0
mA
IEBO
Emitter cut-off current
VEB=5.0V; IC=0
300
mA
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=5V
VF
Diode forward voltage
IF=4A
ts
Storage time
tf
Fall time
700
V
8
7
MHz
2.0
IC=4.5A ; VCC=140V
IB=1.8A; LB=3mH
LC=0.9mH
2
UNIT
V
7
µs
0.55
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BU508DFI