SavantIC Semiconductor Product Specification BUS13 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 850 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 9 V IC Collector current 15 A ICM Collector current-Peak 30 A IB Base current 6 A IBM Base current-Peak 9 A PT Total power dissipation 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 Tmb=25 THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT /W SavantIC Semiconductor Product Specification BUS13 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ; IB=0; L=25mH 400 VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6A 1.5 V VBEsat Base-emitter saturation voltage IC=8A; IB=1.6A 1.6 V ICES Collector cut-off current VCE=RatedBVCEO; VBE=0 TC=125 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE DC current gain IC=2A ; VCE=5V 15 TYP. MAX UNIT V 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=8A; IB1=- IB2=1.6A 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUS13