SavantIC Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage CONDITIONS BUT12F BUT12AF BUT12F BUT12AF Open emitter Open base Open collector VALUE 850 1000 400 450 UNIT V V 9 V IC Collector current 8 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 6 A Ptot Total power dissipation 23 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to ambient VALUE UNIT 55 K/W SavantIC Semiconductor Product Specification BUT12F BUT12AF Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICES PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current CONDITIONS BUT12F MIN TYP. MAX 400 IC=0.1A; IB=0;L=25mH V 450 BUT12AF BUT12F UNIT IC=6A; IB=1.2A BUT12AF IC=5A; IB=1A BUT12F IC=6A; IB=1.2A 1.5 V 1.5 V BUT12AF IC=5A; IB=1A BUT12F VCE=850V ;VBE=0 Tj=125 1.0 3.0 BUT12AF VCE=1000V ;VBE=0 Tj=125 1.0 3.0 10 IEBO Emitter cut-off current VEB=9V; IC=0 hFE-1 DC current gain IC=10mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 mA mA Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUT12F IC=6A;IB1=-IB2=1.2A;VCC=250V For BUT12AF IC=5A;IB1=-IB2=1A;VCC=250V 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUT12F BUT12AF PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3