SavantIC Semiconductor Product Specification BUT18 BUT18A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS BUT18 VCBO Collector-base voltage 400 Open base BUT18A VEBO Emitter-base voltage V 1000 BUT18 Collector-emitter voltage UNIT 850 Open emitter BUT18A VCEO VALUE V 450 Open collector 9 V IC Collector current 6 A ICM Collector current-peak 12 A IB Base current 3 A IBM Base current-peak 6 A Ptot Total power dissipation 110 W TC=25 Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification BUT18 BUT18A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-emitter sustaining voltage CONDITIONS BUT18 MIN TYP. MAX UNIT 400 IC=0.1A; IB=0;L=25mH V 450 BUT18A VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.3 V BUT18 VCE=850V ;VBE=0 Tj=125 1.0 2.0 BUT18A VCE=1000V ;VBE=0 Tj=125 1.0 2.0 10 ICES Collector cut-off current IEBO Emitter cut-off current VEB=9V; IC=0 hFE-1 DC current gain IC=5mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1A ; VCE=5V 10 35 mA mA Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=4A; IB1=-IB2=0.8A VCC=250V 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BUT18 BUT18A