SAVANTIC BUT18AF

SavantIC Semiconductor
Product Specification
BUT18F BUT18AF
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
CONDITIONS
BUT18F
VCBO
Collector-base voltage
400
Open base
BUT18AF
VEBO
Emitter-base voltage
V
1000
BUT18F
Collector-emitter voltage
UNIT
850
Open emitter
BUT18AF
VCEO
VALUE
V
450
Open collector
9
V
IC
Collector current
6
A
ICM
Collector current-peak
12
A
IB
Base current
3
A
IBM
Base current-peak
6
A
Ptot
Total power dissipation
33
W
TC=25
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
SavantIC Semiconductor
Product Specification
BUT18F BUT18AF
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-emitter
sustaining voltage
CONDITIONS
BUT18F
MIN
TYP.
MAX
UNIT
400
IC=0.1A; IB=0;L=25mH
V
450
BUT18AF
VCEsat
Collector-emitter saturation voltage
IC=4A; IB=0.8A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
1.3
V
BUT18F
VCE=850V ;VBE=0
Tj=125
1.0
2.0
BUT18AF
VCE=1000V ;VBE=0
Tj=125
1.0
2.0
10
ICES
Collector
cut-off current
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=10mA ; VCE=5V
10
35
hFE-2
DC current gain
IC=1A ; VCE=5V
10
35
mA
mA
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=4A; IB1=-IB2=0.8A
VCC=250V
2
1.0
µs
4.0
µs
0.8
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BUT18F BUT18AF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3