SavantIC Semiconductor Product Specification BUV27A Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 150 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 12 A ICM Collector current (peak) 20 A IB Base current 4 A IBM Base current (peak) 6 A Ptot Total power dissipation 85 W Tj Tstg TC=25 Max.operating junction temperature Storage temperature 175 -65~175 THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX UNIT 1.76 /W SavantIC Semiconductor Product Specification BUV27A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 VCEsat-1 Collector-emitter saturation voltage VCEsat-2 MIN TYP. MAX 150 V 30 V IC=4A ;IB=0.4 A 0.7 V Collector-emitter saturation voltage IC=7A; IB=0.7A 1.5 V Base-emitter saturation voltage IC=7A; IB=0.7A 2 V ICEX Collector cut-off current VCE =300V;VBE = -1.5 V TC=125 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA VBEsat 2 7 UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) 3 BUV27A