SavantIC Semiconductor Product Specification BUV47A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching time APPLICATIONS ·Suited for 220V switchmode power supply,DC and AC motor control PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 9 A ICM Collector current-peak 15 A IB Base current 3 A IBM Base current -peak 6 A PC Collector power dissipation 120 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification BUV47A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 VCEsat-1 Collector-emitter saturation voltage VCEsat-2 MIN TYP. MAX 450 UNIT V 30 V IC=5A; IB=1.0A 1.5 V Collector-emitter saturation voltage IC=8A; IB=2.5A 3.0 V Base-emitter saturation voltage IC=5A; IB=1.0A 1.6 V ICES Collector cut-off current VCE=1000V; VBE=0 TC=125 0.15 1.5 mA ICER Collector cut-off current VCB=1000V;RBE=10B TC=125 0.4 3.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=1A ; VCE=5V fT Transition frquency IC=0.5A ; VCE=10V;f=1MHz COB Output capacitance IC=0 ; VCB=20V;f=0.1MHz VBEsat 7 15 50 8 MHz 105 pF Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=5A; IB1=-IB2=1A VCC=150V 2 1.0 µs 3.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 BUV47A