SavantIC Semiconductor Product Specification BUV50 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 250 V VCEO Collector-emitter voltage Open base 125 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 25 A ICM Collector current-peak 50 A IB Base current 6 A IBM Base current-peak 12 A PT Total power dissipation 150 W Tj Junction temperature 150 Tstg Storage temperature -65~200 Tmb-25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BUV50 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; L=25mH V(BR)EBO Emitter-base breakdown voltage IE=50mA; IC=0 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=0.5A TC=100 0.8 0.9 V VCEsat-2 Collector-emitter saturation voltage IC=20A; IB=2A TC=100 0.9 1.5 V VCEsat-3 Collector-emitter saturation voltage IC=24A; IB=3A TC=100 1.2 1.8 V VBEsat-1 Base-emitter saturation voltage IC=20A; IB=2A TC=100 1.6 1.7 V VBEsat-2 Base-emitter saturation voltage IC=24A; IB=3A TC=100 1.7 1.9 V ICBO Collector cut-off current VCB=VCBO(BR); IE=0 TC=100 1 5 mA IEBO Emitter cut-off current VEB=5V; IC=0 1 mA hFE DC current gain IC=5A ; VCE=4V 2 MIN TYP. MAX UNIT 125 V 7 V 30 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUV50