SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION ·With TO-3PN package ·High voltage,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BUW13 VCBO Collector-base voltage 400 Open base BUW13A VEBO Emitter-base voltage V 1000 BUW13 Collector-emitter voltage UNIT 850 Open emitter BUW13A VCEO VALUE V 450 Open collector 9 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 6 A IBM Base current-peak 9 A PT Total power dissipation 175 W Tj Junction temperature 150 Tstg Storage temperature -65~175 TC=25 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage CONDITIONS BUW13 MIN TYP. MAX 400 IC=0.1A ; IB=0; L=25mH BUW13A BUW13 V 450 IC=10A; IB=2A BUW13A IC=8A; IB=1.6A BUW13 IC=10A; IB=2A BUW13A UNIT 1.5 V 1.6 V IC=8A; IB=1.6A ICES Collector cut-off current VCE=Rated VCES; VBE=0 TC=125 1.0 4.0 mA IEBO Emitter cut-off current VEB=9V; IC=0 10 mA hFE-1 DC current gain IC=20mA ; VCE=5V 10 35 hFE-2 DC current gain IC=1.5A ; VCE=5V 10 35 Switching times resistive load ton Turn-on time ts Storage time tf Fall time For BUW13 IC=10A ;IB1=-IB2=2A For BUW13A IC=8A ;IB1=-IB2=1.6A 2 1.0 µs 4.0 µs 0.8 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10mm) 3 BUW13 BUW13A