SAVANTIC BUX11

SavantIC Semiconductor
Product Specification
BUX11
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·For use in switching and linear
applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
250
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
20
A
25
A
4
A
150
W
IC
Collector current
ICM
Collector current-peak
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
200
Tstg
Storage temperature
-65~200
tp=10ms
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
MAX
UNIT
1.17
/W
SavantIC Semiconductor
Product Specification
BUX11
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2mA; IB=0
200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=50mA; IC=0
7
V
VCEsat-1
Collector-emitter saturation voltage
IC=6 A;IB=0.6A
0.6
V
VCEsat-2
Collector-emitter saturation voltage
IC=12 A;IB=1.5 A
1.5
V
Base-emitter saturation voltage
IC=12 A;IB=1.5 A
1.5
V
ICEX
Collector cut-off current
VCE=250V;VBE=-1.5V
TC=125
1.5
6.0
mA
ICEO
Collector cut-off current
VCE=160V;IB=0
1.5
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
1.0
mA
hFE-1
DC current gain
IC=6A ; VCE=2V
20
hFE-2
DC current gain
IC=12A ; VCE=4V
10
Transition frequency
IC=1A ; VCE=15V; f=10MHz
8.0
VBEsat
fT
CONDITIONS
MIN
TYP.
MAX
UNIT
60
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=12A ;IB1=1.5A
VCC=150V
IC=12A ;IB1=-IB2=1.5A
VCC=150V
2
1.0
µs
1.8
µs
0.4
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BUX11