SavantIC Semiconductor Product Specification BUY69A BUY69B BUY69C Silicon NPN Power Transistors DESCRIPTION With TO-3 package ·High voltage capability · APPLICATIONS ·For horizontal deflection output stage of CTV receivers and high voltalge, fast switching and industrial applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS BUY69A VCBO VCEO(SUS) Collector-base voltage Collector-emitter sustaining voltage BUY69B Open emitter Emitter-base voltage 800 BUY69C 500 BUY69A 400 BUY69B UNIT 1000 Open base BUY69C VEBO VALUE 325 V V 200 Open collector 8 V IC Collector current 10 A ICM Collector current-peak 15 A IB Base current 3.0 A PD Total power dissipation 100 W Tj Junction temperature 200 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.75 /W SavantIC Semiconductor Product Specification BUY69A BUY69B BUY69C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BUY69A VCEO(SUS) VCBO Collector-emitter sustaining voltage Collector-base voltage BUY69B MIN MAX UNIT 400 IC=100mA ; IB=0 200 BUY69A 1000 IC=1mA; IE=0 BUY69C V 325 BUY69C BUY69B TYP. V 800 500 VCEsat Collector-emitter saturation voltage IC=8A ;IB=2.5A 3.3 V VBEsat Base-emitter saturation voltage IC=8A ;IB=2.5A 2.2 V ICES Collector cut-off current VCE=rated VCES; VBE=0 1.0 mA IEBO Emitter cut-off current VEB=8V; IC=0 1.0 mA hFE DC current gain IC=2.5A ; VCE=10V 15 Transition frequency IC=0.5A ; VCE=10V;f=1MHz 10 fT MHz Switching times tr Rise time ts Storage time tf Fall time IC=5A ;IB1=-IB2=1.0A; VCC=250V 2 0.3 µs 1.8 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUY69A BUY69B BUY69C