SavantIC Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP32/32A/32B/32C APPLICATIONS ·Medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS TIP31 VCBO VCEO Collector-base voltage Collector-emitter voltage VEBO Emitter-base voltage IC TIP31A VALUE 40 Open emitter 60 TIP31B 80 TIP31C 100 TIP31 40 TIP31A UNIT Open base 60 TIP31B 80 TIP31C 100 Open collector V V 5 V Collector current (DC) 3 A ICM Collector current-Pulse 5 A IB Base current 1 A PC Collector power dissipation TC=25 40 Ta=25 2 Tj Junction temperature 150 Tstg Storage temperature -65~150 w SavantIC Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE ICES ICEO PARAMETER Collector-emitter sustaining voltage CONDITIONS MIN TIP31 40 TIP31A 60 MAX IC=30mA; IB=0 UNIT V TIP31B 80 TIP31C 100 Collector-emitter saturation voltage IC=3A IB=0.375A 1.2 V Base-emitter on voltage IC=3A ; VCE=4V 1.8 V 0.2 mA 0.3 mA 1.0 mA Collector cut-off current Collector cut-off current TIP31 VCE=40V; VEB=0 TIP31A VCE=60V; VEB=0 TIP31B VCE=80V; VEB=0 TIP31C VCE=100V; VEB=0 TIP31/31A VCE=30V; IB=0 TIP31B/31C VCE=60V; IB=0 IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=1A ; VCE=4V 25 hFE-2 DC current gain IC=3A ; VCE=4V 10 Transition frequency IC=0.5A ; VCE=10V 3 fT TYP. 2 50 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification TIP31/31A/31B/31C Silicon NPN Power Transistors 4