TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 DEVICES LEVELS 2N3439 2N3439L 2N3439UA 2N3440 2N3440L 2N3440UA JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol 2N3439 2N3440 Unit Collector-Emitter Voltage VCEO 350 250 Vdc Collector-Base Voltage VCBO 450 300 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 1.0 Adc PT 0.8 5.0 2.0 W Top , Tstg -65 to +200 °C Collector Current Total Power Dissipation UA (1) @ TA = +25°C @ TC = +25°C (2) @ TSP = +25°C (3) Operating & Storage Temperature Range 1) 2) 3) TO-5 * 2N3439L, 2N3440L Derate linearly @ 4.57mW/°C for TA > +25°C Derate linearly @ 28.5mW/°C for TC > +25°C Derate linearly @ 14mW/°C for TSP > +25°C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit 2N3439 2N3440 V(BR)CEO 350 250 2N3439 2N3440 ICEO 2.0 2.0 µAdc IEBO 10 µAdc ICEX 5.0 5.0 µAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc RBB1 = 470Ω;VBB1 = 6V L = 25mH (min); f = 30 – 60Hz Collector-Emitter Cutoff Current VCE = 300Vdc VCE = 200Vdc Emitter-Base Cutoff Current VEB = 7.0Vdc Collector-Emitter Cutoff Current VCE = 450Vdc, VBE = -1.5Vdc VCE = 300Vdc, VBE = -1.5Vdc 2N3439 2N3440 Collector-Base Cutoff Current VCB = 360Vdc VCB = 250Vdc VCB = 450Vdc VCB = 300Vdc 2N3439 2N3440 2N3439 2N3440 ICBO Vdc TO-39 * (TO-205AD) 2N3439, 2N3440 2.0 2.0 5.0 5.0 µAdc UA 2N3439UA, 2N3440UA * See Appendix A for Package Outline T4-LDS-0022 Rev. 2 (080663) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368 ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.) Parameters / Test Conditions Symbol Min. Max. hFE 40 30 10 160 Unit (3) ON CHARACTERISTICS Forward-Current Transfer Ratio IC = 20mAdc, VCE = 10Vdc IC = 2.0mAdc, VCE = 10Vdc IC = 0.2mAdc, VCE = 10Vdc Collector-Emitter Saturation Voltage IC = 50mAdc, IB = 4.0mAdc VCE(sat) 0.5 Vdc Base-Emitter Saturation Voltage IC = 50mAdc, IB = 4.0mAdc VBE(sat) 1.3 Vdc Unit DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 10mAdc, VCE = 10Vdc, f = 5.0MHz |hfe| 3.0 15 Forward Current Transfer Ratio IC = 5.0mAdc, VCE = 10V, f = 1.0kHz hfe 25 Output Capacitance VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz Cobo 10 pF Input Capacitance VEB = 5.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz Cibo 75 pF Max. Unit SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Turn-On Time VCC = 200Vdc; IC = 20mAdc, IB1 = 2.0mAdc ton 1.0 µs Turn-Off Time VCC = 200Vdc; IC = 20mAdc, IB1 = -IB2 = 2.0mAdc toff 10 µs SAFE OPERATING AREA DC Tests TC = +25°C, 1 Cycle, t = 1.0s Test 1 VCE = 5.0Vdc, IC = 1.0Adc Test 2 VCE = 350Vdc, IC = 14mAdc Test 3 VCE = 250Vdc, IC = 20mAdc Both Types 2N3439 2N3440 (3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0% T4-LDS-0022 Rev. 2 (080663) Page 2 of 2