1N4448W Surface Mount Fast Switching Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION z z z z z SOD-123 Fast switching speed Ultra-Small surface mount package For general purpose switching applications High conductance Also available in lead-free version D 1 Cathode Band H G 2 MECHANICAL DATA z z z z z z F Case: SOD-123, Plastic Epoxy: UL 94V-0 rate flame retardant Metallurgically bonded construction Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.0094 grams C B A E J REF. A B C D E MARKING Millimeter Min. Max. 1.05 1.25 0.10 REF. 1.05 1.15 0.45 0.65 0.08 0.15 REF. F G H J Millimeter Min. Max. 1.50 1.70 2.60 2.80 3.55 3.85 0.50 REF. T5 ABSOLUTE MAXIMUM RATINGS (at Ta = 25°C unless otherwise specified, single phase half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.) Parameter Symbol Value Unit VRM 100 V 75 V 53 V Non-Repetitive Peak Reverse Voltage Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s 4.0 IFSM Power Dissipation (Note 1) PD 400 mW RθJA 315 ℃/W TJ, TSTG -65 ~ 150 ℃ Thermal Resistance Junction to Ambient Air (Note 1) Operating Temperature, Storage Temperature A 2.0 ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified) Parameters Reverse Breakdown Voltage Forward Voltage (Note 2) Symbol Min. VRM VFM Max. Unit Test Conditions 75 - V IR = 1.0µA - 0.715 0.855 1.0 1.25 V IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 150 mA µA µA µA nA VR = 75V VR = 75V, TJ = 150 °C VR = 25V, TJ = 150 °C VR = 20V Peak Reverse Current (Note 2) IRM - 2.5 50 30 25 Total Capacitance CT - 4.0 pF VR = 0, f = 1.0 MHz Reverse Recovery Time tRR - 4.0 nS IF = IR = 10mA, Irr = 0.1x IR, RL = 100 Ω NOTES: 1. Part mounted on FR-4 PC board with recommended pad layout 2. Short duration test pulse used to minimize self-heating effect. 01-Jun-2004 Rev. B Page 1 of 2 1N4448W Surface Mount Fast Switching Diode Elektronische Bauelemente RATINGS AND CHARACTERISTIC CURVES (1N4448W) IF, INSTANTANEOUS FORWAR DCURRENT (mA) PD, POWER DISSIPATION (mW) 300 200 100 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve 1000 100 10 1.0 0.1 0.01 0 1 2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics IR, LEAKAGE CURRENT (nA) 10,000 1000 100 10 V R = 20V 1 0 100 200 Tj , JUNCTION TEMPERATURE (°C) Fig. 3 Leakage Current vs Junction Temperature 01-Jun-2004 Rev. B Page 2 of 2