SECOS 2N2222A

2N2222A
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of ā€œ-Cā€ specifies halogen & lead-free
FEATURE
TO-92
Complementary PNP type available 2N2907A
G
H
Collector
J
3
A
D
2
PACKAGING INFORMATION
B
Base
Weight: 0.2056 g
1 Emitter
2 Base
3 Collector
REF.
K
A
B
C
D
E
F
G
H
J
K
1
Emitter
E
C
F
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
2.42
2.66
0.36
0.76
ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified)
Symbol
Ratings
Unit
Collector to Base Voltage
Parameter
VCBO
75
V
Collector to Emitter Voltage
VCEO
40
V
Emitter to Base Voltage
VEBO
6
V
Collector Current ā€“ Continuous
IC
600
mA
Collector Power Dissipation
PC
625
mW
TJ, TSTG
+150, -55 ~ +150
ā„ƒ
Junction, Storage Temperature
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-Base Breakdown Voltage
V(BR)CBO
75
-
-
V
IC = 10uA, IE = 0
Collector-Emitter Breakdown Voltage
V(BR)CEO
40
-
-
V
IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
V(BR)EBO
6
-
-
V
IE = 10uA, IC = 0
ICBO
-
-
10
nA
VCB = 60V, IE = 0
Collector Cut-off Current
Test Conditions
Collector Cut-off Current
ICEX
-
-
10
nA
VCE = 60V, VEB(Off) = 3V
Emitter Cut-off Current
IEBO
-
-
100
nA
VEB = 3V, IC = 0
hFE(1)
100
-
300
VCE = 10V, IC = 150mA
hFE(2)
40
-
-
VCE = 10V, IC = 0.1mA
DC Current Gain
hFE(3)*
42
-
-
VCE(sat)(1) *
-
-
0.6
V
IC = 500mA, IB = 50mA
VCE(sat)(2) *
-
-
0.3
V
IC = 150mA, IB = 15mA
VBE(sat) *
-
-
1.2
V
IC = 500mA, IB = 50mA
Delay Time
td
-
-
10
nS
Rise Time
tr
-
-
25
nS
VCC = 30V, VEB(Off) = -0.5V, IC = 150mA,
IB1 = 15mA
Storage Time
ts
-
-
225
nS
Fall Time
tf
-
-
60
nS
Transition Frequency
fT
300
-
-
MHz
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE = 10V, IC = 500mA
VCC = 30V, Ic = 150mA,
IB1 = IB2 = 15mA
VCE = 20V, IC = 20mA, f = 100MHz
* Pulse Test
CLASSIFICATION OF hFE(1)
Rank
Range
01-June-2005 Rev. B
L
H
100 - 200
200 - 300
Page 1 of 3
2N2222A
Elektronische Bauelemente
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
01-June-2005 Rev. B
Page 2 of 3
2N2222A
Elektronische Bauelemente
NPN Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
01-June-2005 Rev. B
Page 3 of 3