2N5401 PNP Transistor Plastic-Encapsulate Transistors Elektronische Bauelemente RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 3.5 ±0.2 4.5±0.2 4.55±0.2 FEATURES Power Dissipation o 14.3 ±0.2 PCM : 0.625 W (Tamb=25 C) Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range o 0.43 +0.08 –0.07 0.46 +0.1 –0.1 (1.27 Typ.) o TJ, Tstg: -55 C to +150 C 1: Emitter 2: Base 3: Collector +0.2 1.25–0.2 1 2 3 2.54 ±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= -100 µA, IE=0 -160 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -150 V Emitter-base breakdown voltage V(BR)EBO IE= -10 µA, IC=0 -5 V Collector cut-off current ICBO VCB= -120 V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -4 V, IC=0 -0.1 µA hFE(1) VCE= -5 V, IC=-1 mA 80 hFE(2) VCE= -5 V, IC= -10 mA 80 hFE(3) VCE= -5 V, IC=-50 mA 50 Collector-emitter saturation voltage VCE(sat) IC= -50 mA, IB= -5 mA -0.5 V Base-emitter saturation voltage VBE(sat) IC= -50 mA, IB= -5 mA -1 V DC current gain 250 VCE=-5V, IC=-10mA fT Transition frequency 100 MHz f =30MHz CLASSIFICATION OF hFE(2) Rank A B C Range 80~160 120~180 150~ 250 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 1