2N7002DW 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o 0 .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc VGS ± 20 Gate–Source Voltage – Continuous .053(1.35) .045(1.15) .096(2.45) .085(2.15) MA XIMUM R AT ING S Vdc .018(0.46) .010(0.26) .014(0.35) .006(0.15) .006(0.15) .003(0.08) .087(2.20) .079(2.00) .004(0.10) .000(0.00) .043(1.10) .035(0.90) .039(1.00) .035(0.90) T HE R MA L C HA R A C T E R IS T IC S C harac teris tic Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature S ymbol Max Unit PD 150 1.8 mW mW/°C RθJA 625 °C/W TJ, Tstg – 55 ~ +150 Dimensions in inches and (millimeters) °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≦ 300 µs, Duty Cycle ≦ 2.0%. 3. FR–5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. D2 G1 S1 S2 G2 D1 MA R K ING DIA G R A M Κ72 http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B Any changing of specification will not be informed individual Page 1 of 3 2N7002DW 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 60 – – Vdc IDSS – – – – 1.0 500 µAdc Gate–Body Leakage Current, Forward (VGS = 20 Vdc) IGSSF – – 10 nAdc Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) IGSSR – – –10 nAdc VGS(th) 1.0 – 2.0 Vdc ID(on) 0.5 1 – A R DS(on) – – 13.5 – – 7.5 gFS 80 – – ms Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss – – 50 pF Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Coss – – 25 pF Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Crss – – 5.0 pF td(on) – – 20 ns td(off) – – 20 ns OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) TJ = 25°C TJ = 125°C ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25°C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C Forward Transconductance (VDS = 10 V, ID = 200 mAdc) Ohms DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time Turn–Off Delay Time http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B (VDD = 30 25 Vdc, ID ^ 200 500 mAdc, RG = 25 Ω, RL = 150 Ω, Vgen = 10 V) Any changing of specification will not be informed individual Page 2 of 3 2N7002DW 115 mAMPS, 60VOLTS, RDS(on)=7.5 W Small Signal MOSFET Elektronische Bauelemente TYPICAL ELECTRICAL CHARACTERISTICS 7 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 0.8 0.6 Tj = 25°C RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 5.5V 5.0V 0.4 0.2 6 5 VGS = 5.0V 4 3 VGS = 10V 2 1 0 0 0 1 3 2 0 5 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.2 1.5 VGS = 10V, ID = 0.5A VGS = 5.0V, ID = 0.05A 1.0 0.5 0 -55 -30 -5 20 45 70 95 120 145 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature http://www.SeCoSGmbH.com 01-Jan-2006 Rev. B 5 4 ID = 50mA ID = 500mA 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage Any changing of specification will not be informed individual Page 3 of 3