2N7002KG 190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES z z z z z z 2 kV ESD Protection Lower On-resistance: 2 Ω Low Threshold: 2 V (Typ.) Low Input Capacitance: 25 pF Fast Switching Performance: 25 nS Low Input and Output Leakage A L 3 3 1 1 K APPLICATIONS z z z z C B Top View 2 E 2 Drain Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays D 3 F G H J 1 Gate REF. A B C D E F 2 Source PACKAGE INFORMATION Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 Weight: 0.07800g (Approximately) MARKING CODE K7K ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Test Conditions N-Ch Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 ID 2 Continuous Drain Current 1 Pulsed Drain Current IDM Power Dissipation2 PD Thermal Resistance Junction-Ambient Operating Junction and Storage Temperature Max. V 300 190 @TA=25°C mA @TA=100°C 800 0.35 W 0.14 @TA=25°C @TA=100°C RθJA 350 °C/W TJ, TSTG -55 ~ +150 °C Notes: 1. Pulse width limited by maximum junction temperature. 2. Surface mounted on FR4 board. 01-December-2008 Rev. B Page 1 of 5 2N7002KG 190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection Elektronische Bauelemente N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ.2 Max. V(BR)DSS 60 - - VGS(th) 1.0 - 2.5 gfs 100 - - mS VDS = 10V, ID = 200 mA - - ±10 μA VDS = 0, VGS = ±20V - - ±150 VDS = 0, VGS = ±10V - - ±1000 VDS=0,VGS=±10V,TJ=85°C - - ±100 - - 10 VDS = 50, VGS = 0 - - 100 VDS = 50V, VGS=0, TJ=85°C - - 1 - - 500 800 - - Unit Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Forward Transconductance2 Gate-Body Leakage Current Zero Gate Voltage Drain Current On-State Drain Current2 V VDS = VGS, ID = 250uA IGSS nA IDSS ID(ON) VGS = 0, ID = 10uA μA VDS = 0, VGS = ±5V VDS = 60V, VGS = 0 VDS=60V, VGS=0, TJ=125°C mA VGS = 10V, VDS = 7.5V 500 - - - - 2 - - 4 VDS(ON) - - 1.3 V Total Gate Charge Qg - 0.4 0.6 nC VDS=10V,VGS=4.5V,ID=250mA Input Capacitance Ciss - 30 - Output Capacitance Coss - 6 - pF VDS=25V, VGS=0V, f=1MHz Reverse Transfer Capacitance Crss - 2.5 - t(ON) - - 25 Drain-Source On-Resistance2 Diode Forward Voltage rDS(ON) VGS = 4.5V, VDS = 10V Ω VGS = 10V, IDS = 500mA VGS = 4.5V, IDS = 200mA IS = 200mA, VGS = 0 Dynamic2 Switching2,3 Turn-On Time nS Turn-Off Time Notes: t(OFF) - - 35 VDD=30V,RL=150Ω,ID= 200mA,VGEN=10V,RG=10Ω 1. TA = 25°C unless otherwise noted. 2. For DESIGN AID ONLY, not subject to production testing. 3. Pulse test: PW ≦ 300μs duty cycle ≦ 2% 4. Switching time is essentially independent of operating temperature. 01-December-2008 Rev. B Page 2 of 5 2N7002KG Elektronische Bauelemente 190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection CHARACTERISTIC CURVE 01-December-2008 Rev. B Page 3 of 5 2N7002KG Elektronische Bauelemente 190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection CHARACTERISTIC CURVE (N-Ch, cont’d) 01-December-2008 Rev. B Page 4 of 5 2N7002KG Elektronische Bauelemente 190 mA, 60 V, RDS(ON) = 2 Ω N-Ch Small Signal MOSFET with Gate Protection CHARACTERISTIC CURVE (N-Ch, cont’d) 01-December-2008 Rev. B Page 5 of 5