2SA1020 PNP Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free T O-92 MOD 4.9 ±0.2 8.6±0.2 6.0±0.2 FEATURE Power Amplifier Applications Symbol o Ta=25 C unless otherwise noted Value Units VCBO Collector-Base Voltage -50 V VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 Collector Current -2 V V A Total Power Dissipation 900 mW IC PD TJ,Tstg Parameter -5 Junction and Storage Temperature -55~+150 14 ±0.2 MAXIMUM RATINGS 2.0 +0.3 –0.2 1.0±0.1 0.45 +0.1 –0.1 0.50 +0.1 –0.1 (1.50 Typ.) 1.9 +0.1 –0.1 C O 1 2 3 3.0 ±0.1 1: Emitter 2: Collector 3: Base Unit: mm o ELECTRICAL CHARACTERISTICS Tamb=25 C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO Min -50 -50 -5 - -1 uA Emitter-Base Cutoff Current I CBO I EBO Typ. - - - -1 uA Collector Saturation Voltage VCE(sat) VBE(sat) - -0.5 Base Satruation Voltage - V V 70 - 100 240 40 - Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance hFE1 fT Cob Max - -1.2 - Unit V V V Test Conditions I C=-100µA,IE=0 I C=-1mA,IB=0 I E=-100µA,IC=0 VCB=-50V,IE=0 VBE=-5 V,IC=0 I C=- 1A,IB=-50mA I C=- 1 A,IB=- 50mA VCE=-2 V, I C=- 500A MH z pF VCE=-2 V, IC=- 500mA VCB=-10 V , f=1MHz Classification of hFE1 Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A O Y 70~140 120~240 Any changing of specification will not be informed individual Page 1 of 3 2SA1020 PNP Transistor Elektronische Bauelemente Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Plastic-Encapsulate Transistors 2SA1020 Any changing of specification will not be informed individual Page 2 of 3 2SA1020 PNP Transistor Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Plastic-Encapsulate Transistors Any changing of specification will not be informed individual Page 3 of 3