2SA1213 PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 D Dimensions In Millimeters D1 1.BASE Symbol A 2.COLLECTOR 3.EMITTER E E1 b1 *Features L b Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.360 0.560 0.014 0.022 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.400 1.800 0.055 0.071 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 1.500TYP e C e e1 Dimensions In Inches Min 0.167 0.060TYP e1 2.900 3.100 0.114 0.122 L 0.900 1.100 0.035 0.043 Collector Current -2A Low power dissipation 0.5W *Stucture Epitaxial planar type. PNP silicon transistor. ELECTRICAL CHARACTERISTICS Tamb=25 Parameter unless Symbol otherwise Test specified conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA ， IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA， IC=0 -5 V Collector cut-off current ICBO VCB=-50 V , IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5 V , -0.1 μA hFE 1 VCE=-2V, IC= -0.5A 70 hFE 2 VCE=-2V, IC= -2A 20 Collector-emitter saturation voltage VCEsat IC=-1A, IB= -0.05A -0.5 V Base-emitter saturation voltage VBEsat IC=-1A, IB= -0.05A -1.2 V Transition frequency f VCE= -2V, IC=-0.5A IC=0 240 DC current gain T 100 MHz CLASSIFICATION OF hFE Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Ｏ Ｙ ７０－１４０ １２０－２４０ NO、NY Any changing of specification will not be informed individual Page 1 of 3 2SA1213 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A PNP Silicon Medium Power Transistor Any changing of specification will not be informed individual Page 2 of 3 2SA1213 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A PNP silicon Medium Power Transistor Any changing of specification will not be informed individual Page 3 of 3