2SA673/673A PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistor TO-92 4.55±0.2 4.5±0.2 FEATURES 3.5±0.2 * Low Frequency Amplifier * Complementary Pair with 2SC1213 and 2SC1213A * RoHS Compliant Product * A suffix of "-C" specifies halogen-free (1.27 Typ.) 14.3±0.2 1.25±0.2 1 2 3 1: Emitter 2: Base 3: Collector 2.54±0.1 –0.07 0.43+0.08 0.46±0.1 o MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 2SA673 2SA673A -35 VCEO Collector-Emitter Voltage 2SA673 2SA673A -35 VEBO Emitter-Base Voltage IC Units V -50 V -50 -4 V Collector Current -Continuous -500 mA PC Collector Power dissipation 400 mW TJ Junction Temperature 150 o Tstg Storage Temperature -55-150 o C C o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions IC=-10µA,IE=0 Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 Collector cut-off current ICBO VCB= -20 V, IE=0 DC current gain Collector-emitter saturation voltage Base-emitter voltage MIN IC=-1mA,IB=0 2SA67 3 2SA673A -35 2SA673 2SA673A -35 V -4 V -0.5 60 hFE(2) VCE=-3V, IC=-500mA 10 µA 320 IC= -150mA, IB=-15mA -0.6 VCE=-3V, IC=-10mA UNIT V -50 VCE=-3V, IC= -10mA VBE MAX -50 *hFE(1) *VCEsat TYP -0.64 V V * Pulse test. CLASSIFICATION OF hFE(1) Rank B C D Range 60-120 100- 200 160-320 http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 1 of 2 2SA673/673A Elektronische Bauelemente PNP Silicon Plastic -Encapsulate Transistor CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 2