2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Complementary to 2SC1623K High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage: VCEO = -50V PACKAGE DIMENSIONS SOT-23 3 Collector 1 Base 2 Emitter A L K 3 B S Top View 1 V J 2 C G H D Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V IC -100 mA Pc 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Junction, Storage Temperature CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit BVCBO -60 - - V IC=-100uA BVCEO -50 - - V IC=-1mA BVEBO -5 - - V IE=-100uA ICBO - - -100 nA VCB=-60V IEBO - - -100 nA VEB=-5V *VCE(sat) - - 300 mV IC=100mA, IB=10mA V VBE -0.58 - -0.68 hFE 90 - 600 fT - 180 - MHz Cob - 4.5 - pF Test Conditions IC = -1mA, VCE = -6V VCE=-6V, IC=-1mA VCE=-6V, IC=-10mA VCB = -10V, f = 1 MHz CLASSIFICATION OF hFE Rank Range Marking 01-June-2002 Rev. A P Y G B 90 - 180 135 - 270 200 - 400 300 - 600 M4 M5 M6 M7 Page 1 of 2 2SA812K Elektronische Bauelemente -50 V, -100 mA PNP Epitaxial Planar Transistor CHARACTERISTIC CURVES 01-June-2002 Rev. A Page 2 of 2