2SB562 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z Low frequency power amplifier z Complementary pair with 2SD468 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Symbol Ratings Unit Collector to Base Voltage Parameter VCBO -25 V Collector to Emitter Voltage VCEO -20 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1 A Total Power Dissipation Pc 0.9 W TJ, TSTG +150, -55 ~ +150 ℃ Junction, Storage Temperature ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C Min. Typ. Max. Unit V(BR)CBO Symbol -25 - - V IC=-10 μA, IE = 0 Test Conditions V(BR)CEO -20 - - V IC=-1 mA, IB = 0 V(BR)EBO -5 - - V IE=-10 μA, IC = 0 ICBO - - IEBO - -1 μA VCB=-20 V, IE = 0 -1 μA VEB=-4 V, IC = 0 VCE(sat) - - -0.5 V IC=-0.8A, IB=-0.08A VBE - - -1 V VCE=-2V, IC=-0.5A hFE(1) 85 - 240 fT - 350 - MHz VCE=-2V, IC=-0.5A Cob - 38 - pF VCE = -2V, IC = -0.5 A VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A B C 85 -170 120 - 240 Any changes of specification will not be informed individually. Page 1 of 3 2SB562 Elektronische Bauelemente 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A Any changes of specification will not be informed individually. Page 2 of 3 2SB562 Elektronische Bauelemente http://www.SeCoSGmbH.com/ 01-June-2002 Rev. A 0.9 W, -1 A, -25 V PNP Plastic Encapsulated Transistor Any changes of specification will not be informed individually. Page 3 of 3