2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C 3.2±0.2 8.0±0.2 FEATURES 2.0±0.2 4.14±0.1 Power smplifier applications O3.2±0.1 O2.8±0.1 11.0±0.2 1.4±0.1 1 Power dissipation PCM : 1 W （Tamb=25℃） Collector current ICM : - 1.5 A Collector-base voltage V(BR)CBO : -180 V 1.27±0.1 0.76±0.1 2.28 Typ. 4.55±0.1 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimensions in Millimeters ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless Symbol Test otherwise specified） conditions Collector-base breakdown voltage V(BR)CBO Ic=-1mA ， IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA ， IB=0 Collector-emitter breakdown voltage V(BR)EBO IE=-1mA， Ic=0 MIN 2SB649 2SB649A MAX UNIT -180 V -120 -160 V -5 V Collector cut-off current ICBO VCB=- 160 V, IE=0 -10 μA Emitter cut-off current IEBO VEB= -4V , -10 μA IC =0 hFE(1) * VCE= -5V, IC= -150 mA hFE(2) * VCE=- 5V, IC = -500mA VCE (sat) * IC =- 500 mA, IB=- 50mA DC current gain Collector-emitter saturation voltage 2SB649 2SB649A 60 60 320 200 30 -1 V -1.5 V Base-emitter voltage VBE * VCE=- 5V,IC=-150mA Transition frequency fT VCE=-5V,, IC=- 150 mA 140 MHz VCB=-10 V , IE =0,f=1MHz 27 pF Collector output capacitance * 3 15.3±0.2 Collector-emitter voltage VCEO 2SB649 : -120 V 2SB649A : -160 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 Parameter 2 C ob The 2SB649 and 2SB649A are grouped by h FE1 as follows. Rank C D 60 - 120 100 - 200 160 - 320 2SB649A 60 - 120 100 - 200 ---- http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A B 2SB649 Any changing of specification will not be informed individual Page 1 of 2 2SB649/2SB649A PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors Maximum Collector Dissipation Curve Area of Safe Operation –3 ICmax Collector current IC (A) 20 10 (–40 V, –0.5 A) –0.3 DC Operation (TC = 25°C) –0.1 (–120 V, –0.038 A) –0.03 50 100 Case temperature TC (°C) 150 –0.01 –1 –3 –10 –30 –100 –300 Collector to emitter voltage VCE (V) Typical Transfer Characteristics Typical Output Characteristics –0.5 mA IB = 0 –1 –30 –50 –10 –20 –40 Collector to emitter voltage VCE (V) 0 0 DC Current Transfer Ratio vs. Collector Current VCE = –5V 350 250 Ta = 75°C 25°C 200 150 –25°C 100 50 0 –1 http://www.SeCoSGmbH.com/ –10 –100 –1,000 Collector current IC (mA) Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) DC current transfer ratio hFE 350 –0.2 –0.4 –0.6 –0.8 –1.0 Base to emitter voltage VBE (V) –1.2 IC = 10 IB –1.0 –0.8 –0.6 –0.4 –0.2 –0 –1 5°C –0.2 –10 =7 W –1.0 –100 Ta 20 –1.5 –0.4 VCE = –5 V Ta = 75°C = –0.6 TC = 25°C PC –0.8 .0 ––54.5 .0 –4 .5 –3 0 –3. –2.5 –2.0 –500 Collector current IC (mA) –5 .5 –1.0 Collector current IC (A) (–160 V, –0.02 A) 2SB649A 2SB649 0 01-Jun-2002 Rev. A (–13.3 V, –1.5 A) –1.0 25 –25 Collector power dissipation PC (W) 30 –10 –100 Collector current IC (mA) –25 25 –1,000 Any changing of specification will not be informed individual Page 2of 2