2SB772 PNP Type Elektronische Bauelemente Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 Features 3.5±0.2 4.55±0.2 4.5±0.2 * Power Dissipation: PCM: 625 mW (Tamb=25oC) o Symbol Value Units VCBO Collector-Base Voltage Parameter -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current –Continuous -3 A PC Collector Dissipation 0.625 W TJ Junction Temperature 150 o Tstg Storage Temperature -55~150 o Symbol (1.27 Typ.) +0.2 1 2 3 C 1.25–0.2 1: Emitter 2: Collector 3: Base 2.54±0.1 unless Test 0.43+0.08 –0.07 0.46+0.1 –0.1 C ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter 14.3±0.2 MAXIMUM RATINGS* TA=25 C unless otherwise noted otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100μA ，IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10 mA , -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100 μA，IC=0 -6 V Collector cut-off current ICBO VCB= -40 V , IE=0 -1 μA Collector cut-off current ICEO VCE=-30 V , IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V , -1 μA hFE（1） VCE= -2V, IC= -1A 60 hFE（2） VCE=-2V, IC= -100mA 32 Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V DC current gain Transition frequency VCE= -5V, fT IB=0 IC=0 IC=-0.1A 400 50 f = 10MHz MHz CLASSIFICATION OF hFE(1) Rank R O Y GR Range 60-120 100-200 160-320 200-400 http://www.SeCoSGmbH.com/ 01-Jun-2005 Rev. B Any changing of specification will not be informed individual Page 1 of 2 2SB772 Elektronische Bauelemente PNP Type Plastic Encapsulate Transistors Typical Characteristics http://www.SeCoSGmbH.com/ 01-Jun-2005 Rev. B Any changing of specification will not be informed individu Page 2of 2