SECOS 2SC1815K

2SC1815K
NPN Type
Elektronische Bauelemente
Plastic Encapsulate Transistors
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
SOT-23
ƔFEATURES
. Power Dissipation
PCM: 0.2 W ( Ta = 25 к )
A
. Collector Current
L
ICM: 0.15 A
3
. Collector-Base Voltage
3
B S
Top View
V(BR)CBO: 60 V
1
1
2
V
2
G
1.BASE
C
2.EMITTER
3.COLLECTOR
H
D
J
K
Dim
Min
Max
A
2.800
3.040
B
1.200
1.400
C
0.890
1.110
D
0.370
0.500
G
1.780
2.040
H
0.013
0.100
J
0.085
0.177
K
0.450
0.600
L
0.890
1.020
S
2.100
2.500
V
0.450
0.600
All Dimension in mm
ƔABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta = 25к)
TYPE NUMBER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE (sat)
VBE(sat)
Transition Frequency
Operating and Storage Junction
Temperature Range
fT
TJ, TSTG
TEST CONDITIONS
IC = 100 µA, IE = 0 A
IC = 0.1 mA, IB = 0 A
IE = 100 µA, IC = 0 A
VCB = 60 V, IE = 0 A
VCE = 50 V, IB = 0 A
VEB = 5 V, IC = 0 A
VCE = 6 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA,
f = 30 MHz
-
Min.
60
50
5
130
-
Typ.
-
Max.
0.1
0.1
0.1
400
0.25
1
UNIT
V
V
V
µA
µA
µA
80
-
-
MHz
- 55 ~ +150
V
V
к
ƔhFE VALUES ARE CLASSIFIED AS FOLLOWS:
Rank
hFE
L
130 ~ 200
H
200 ~ 400
Marking: HF
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 1 of 3
2SC1815K
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
NPN Type
Plastic Encapsulate Transistors
Any changing of specification will not be informed individual
Page 2 of 3
2SC1815K
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
NPN Type
Plastic Encapsulate Transistors
Any changing of specification will not be informed individual
Page 3 of 3