2SC1383L/2SC1384L NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92L 3.9 ±0.2 4.9±0.2 8.0±0.2 FEATURE Power dissipation 1 W (Tamb=25℃) 1.0±0.1 2.0 +0.3 –0.2 PCM: ICM: 14 ±0.2 Collector current 1 A Collector-base voltage V(BR)CBO: 2SC1383L: 30 V 2SC1384L: 60 V Operating and storage junction temperature range 0.40 +0.05 –0.05 0.45 +0.1 –0.1 (1.27 Typ.) 1: Emitter 2: Collector 3: Base 1.4 +0.R2 –0.2 TJ, Tstg: -55℃ to +150℃ 1 2 3 2.54 ±0.1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter unless Symbol Collector-base breakdown voltage 2SC1383L 2SC1384L Collector-emitter breakdown voltage 2SC1383L 2SC1384L Emitter-base breakdown voltage Test specified) conditions V(BR)CBO Ic= 10µA , IE=0 V(BR)CEO IC=2mA , V(BR)EBO IE= 10µA, IC=0 ICBO Collector cut-off current otherwise hFE(1) VCB=20V , VCE=10 V, Unit: mm IB=0 MIN MAX 30 V 60 25 V 50 5 IE=0 V 0.1 IC= 500mA 85 IC= 1A 50 UNIT µA 340 DC current gain hFE(2) Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) fT Transition frequency VCE=5 V, IC= 500m A, IB=50mA IC= 500mA , IB= 50mA VCE= 10 V, IC= 50mA 0.4 V 1.2 V 100 MHz CLASSIFICATION OF hFE(1) Rank Range http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Q R S 85-170 120-240 170-340 Any changing of specification will not be informed individual Page 1 of 3 2SC1383L/2SC1384L NPN Silicon Elektronische Bauelemente General Purpose Transistor PC Ta IC VCE 0.6 0.4 1.00 6 mA 5 mA 0.75 4 mA 3 mA 0.50 2 mA 0 80 120 160 0 2 Ambient temperature Ta (°C) Ta = 75°C 25°C −25°C 0.1 0.01 0.001 0.01 0.1 1 10 25°C 0.1 1 80 40 −100 8 10 12 500 400 300 Ta = 75°C 200 25°C −25°C 100 0 0.01 10 0.1 1 10 Collector current IC (A) VCER RBE 120 IE = 0 f = 1 MHz Ta = 25°C 40 30 20 10 0 6 VCE = 10 V Cob VCB Collector output capacitance C ob (pF) (Common base circuited) Transition frequency fT (MHz) 0.1 50 120 01-Jun-2002 Rev. A Ta = −25°C 75°C 0.01 0.01 4 hFE IC Collector current IC (A) 160 http://www.SeCoSGmbH.com/ 2 600 1 fT I E Emitter current IE (mA) 0 Base current IB (mA) 10 200 V = 10 V CB Ta = 25°C −10 0 10 IC / IB = 10 Collector current IC (A) 0 −1 8 0.4 VBE(sat) IC IC / IB = 10 1 6 100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 10 4 0.6 Collector-emitter voltage VCE (V) Forward current transfer ratio hFE 40 0.8 0.2 1 mA Collector-emitter voltage (V) (Resistor between B and E) VCER 0 1.0 IB = 10 mA 9 mA 8 mA 7 mA 0.25 0.2 VCE = 10 V Ta = 25°C Collector current IC (A) Collector current IC (A) Collector power dissipation PC (W) 0.8 1.2 Ta = 25°C 1.25 1.0 0 IC I B 1.50 1.2 1 10 Collector-base voltage VCB (V) 100 IC = 10 mA Ta = 25°C 100 80 60 2SC1384 40 2SC1383 20 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) Any changing of specification will not be informed individual Page 2 of 3 2SC1383L/2SC1384L NPN Silicon Elektronische Bauelemente General Purpose Transistor ICEO Ta 104 Safe operation area 10 VCE = 10 V Single pulse Ta = 25°C ICP 10 1 0 40 80 120 Ambient temperature Ta (°C) http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A 160 IC t = 10 ms t=1s 0.1 0.01 0.001 0.1 1 10 2SC1384 102 1 2SC1383 Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 103 100 Collector-emitter voltage VCE (V) Any changing of specification will not be informed individual Page 3 of 3