2SC2712 NPN Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES 3 Collector 1 Base *Power Dissipation PCM: 150 mW (Tamb=25 oC) 2 *Collector Current ICM: 150 mA A *Collector-Base Voltage V(BR)CBO: 60 V Emitter L 3 Top View 1 *Operating and Storage Junction Temperature Range V o TJ,TSTG: -55~+150 C *RoHS Compliant Product B S 2 G H ELECTRICAL CHARACTERISTICS (Tamb=25oC Parameter Symbol Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm C D Dim J K unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100µA , IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V, IC=0 0.1 µA DC current gain hFE VCE=6V, IC=2mA VCE(sat) IC= 100mA, IB=10mA fT VCE=10V, IC= 1mA Output capacitance Cob VCB=10V, IE=0,f=1 MHz Noise Figure NF Collector-emitter saturation voltage Transition frequency 70 700 0.1 0.25 80 VCE=6V,IC=0.1mA,f=1kHz, Rg=10kΩ V MHz 2.0 3.5 pF 1.0 10 dB CLASSIFICATION OF hFE Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A O Y GR BL 70-140 120-240 200-400 350-700 LO LY LG LL Any changing of specification will not be informed individual Page 1 of 1