2SC3052 NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR A L 1.BASE 3 2.EMITTER FEATURES n n n B S Top View 1 Excellent linearity of DC forward current gain 2 V G RoHS Compliant Product Low collector to emitter saturation voltage VCE(sat) = 0.3V max (@IC=100mA, IB=10mA) C H D J K Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.2 A PC Collector Dissipation 150 mW TJ, Tstg Junction and Storage Temperature o C 125, -55~125 ELECTRICAL CH ARACTERIST ICS (Tam b = 25 oC unless otherwise sp ecified ) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=100 µ A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO Ic= 100µ A, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100µ A, IC=0 6 V Collector cut-off current ICBO VCB= 50 V , IE=0 0.1 µA Emitter cut-off current IEBO VEB= 6V , IC=0 0.1 µA hFE(1) VCE= 6V, IC= 1mA hFE(2) VCE= 6V, IC= 0.1mA Collector-emitter saturation voltage VCE(sat) I C = 100mA, IB = 10mA 0.3 V Base-emitter saturation voltage VBE(sat) I C = 100mA, IB = 10mA 1 V DC current gain fT Transition frequency 150 800 50 VCE=6V , IC= 10mA 180 MHz Collector output capacitance Cob VCE=6V, IE = 0, f = 1 MHz 4 pF Noise figure NF V CE=6V, IE = -0.1mA, f = 1KHz RG=2KΩ 15 dB CLASSIFICATION OF hFE Marking Rank Range http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A LE E 150-300 LF F 250-500 LG G 400-800 Any changing of specification will not be informed individual Page 1 of 3 2SC3052 Elektronische Bauelemente NPN Silicon Plastic-Encapsulate Transistor TYPICAL CHARACTERISTICS (TA = 25 o C) http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 2 of 3 2SC3052 Elektronische Bauelemente http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A NPN Silicon Plastic-Encapsulate Transistor Any changing of specification will not be informed individual Page 3 of 3