2SD1949 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product FEATURES SOT-323 A L * High current.(IC=5A) * Low saturation voltage, typically 3 B S Top View VCE(sat)=0.1V at IC / IB=150mA / 15mA 1 2 V G COLLECTOR C 3 1 BASE H D J K 2 EMITTER Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 All Dimension in mm MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 200 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol unless Test otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100µA , IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100µA, IC=0 5 V Collector cut-off current ICBO VCB= 30 V, IE=0 0.5 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.5 µA DC current gain hFE VCE=3V, IC=10mA Collector-emitter saturation voltage Transition frequency Output capacitance VCE(sat) fT Cob 120 390 IC= 150mA, IB=15mA VCE=5V, IC=20mA f=100 MHz VCB=10V, IE=0,f=1 MHz 0.4 V 250 MHz 6.5 pF CLASSIFICATION OF hFE Rank Range Marking http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Q R 120-270 180-390 YQ YR Any changing of specification will not be informed individual Page 1 of 4 2SD1949 NPN Silicon Elektronische Bauelemente General Purpose Transistor Electrical characteristic curves 100 200 1000 0.50 VCE=6V Ta=25 C 0.45 2 1 -25 C 5 25 C C 20 10 0.5 500 0.40 80 DC CURRENT GAIN hFE COLLECTOR CURRENT : IC (mA) 50 Ta=100 COLLECTOR CURRENT : IC (mA) VCE=6V 100 0.35 0.30 60 0.25 0.20 40 0.15 0.10 20 1V 100 50 0.05 0.2 VCE=3V 200 IB=0mA 0.1 0 0.2 0.4 0.6 0.8 1.0 2 3 4 0.1 0.2 0.5 1 2 5 5 10 20 50 100 200 500 COLLECTOR CURRENT IC (mA) Fig.1 Ground emitter propagation characteristics Fig.2 Ground emitter output characteristics Fig.3 DC current gain vs. Collector current ( ) Ta=25 C VCE=10V 25 C -25 C 100 50 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Ta=75 C IC/IB=10 0.5 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 500 200 1 COLLECTOR TO EMITTER VOLTAGE : VCE (V) 1000 DC CURRENT GAIN hFE 0 0 1.2 BASE TO VOLTAGE : VBE (V) 0.2 100/1 IC/IB= 0.1 50/1 20/1 0.05 10/1 0.5 0.2 0.1 0.05 25 C Ta=75 C -25 C 20 1 2 5 10 20 0.02 50 100 200 500 1000 5 10 20 50 100 200 500 0.02 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) Fig.4 DC current gain vs. Collector currnet ( ) Fig.5 Collector-emitter saturation voltage vs. Collector current Fig.6 Collector-emitter saturation voltage vs. collector current Ta=25 C f=1MHz IE=0A 50 Cib 20 Cob 10 5 VCE=6V 500 200 100 0.1 0.2 0.5 1 2 5 10 20 -1 -2 -5 -10 -20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Input-and-output capacity vs.voltage characteristic Fig.8 Transition frequency vs.emitter current http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Ta=25 C COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR CURRENT IC (mA) -50 Any changing of specification will not be informed individual Page 2 of 4