2SD2142 NPN Plastic Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 3.COLLECTOR FEATURES z Darlington connection for a high hFE z High input impedance 1.BASE 2.EMITTER A MARKING：R1M L 3 1 Top View V B S 2 G C H D Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm J K o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 300 mA PC Collector Dissipation 200 mW TJ, Tstg Junction and Storage Temperature C o -55~150 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0 32 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 12 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=12V,IC=0 0.1 μA DC current gain hFE VCE=3V,IC=100mA 1.4 V Collector-emitter saturation voltage Transition frequency Collector output capacitance http://www.SeCoSGmbH.com 01-Jun-2007 Rev. A VCE(sat) fT Cob 5000 IC=200mA,IB=0.2mA VCE=5V,IC=10mA,f=100MHz 200 MHz VCB=10V,IE=0,f=1MHz 2.5 pF Any changing of specification will not be informed individual Page 1 of 2 2SD2142 Elektronische Bauelemente NPN Plastic Plastic-Encapsulate Transistor Typical Characteristics 2SD2142 http://www.SeCoSGmbH.com 01-Jun-2007 Rev. A Any changing of specification will not be informed individual Page 2 of 2