2SD602, 602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z SOT-23 3 Collector For general amplification Complementary to 2SB710 and 2SB710A Low collector to emitter saturation voltage VCE(sat) Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 1 Base MARKING CODE 2SD602: 2SD602A: Dim 2 Emitter A WQ1, WR1, WS1 XQ, XR, XS L 3 B S Top View 1 V J K 2 C G H D All Dimension in mm ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol 2SD602 Collector to Base Voltage 2SD602A 2SD602 Collector to Emitter Voltage 2SD602A Emitter to Base Voltage Junction, Storage Temperature Unit 30 VCBO V 60 25 VCEO V 50 VEBO 5 V IC 500 mA Pc 200 mW TJ, TSTG +150, -55 ~ +150 ℃ Collector Currrent Total Power Dissipation Ratings CHARACTERISTICS at Ta = 25°C PARAMETER TEST CONDITIONS SYMBOL Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 2SD602 2SD602A V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 2SD602 2SD602A V(BR)CEO MIN. 30 60 25 50 TYP. MAX. UNIT - - V - - V Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 V(BR)EBO 5 - - V Collector Cutoff Current VCE = 20V, IB = 0 ICEO - - 0.1 μA Emitter Cutoff Current VEB = 5V, IC = 0 IEBO - 0.1 μA Collector-Emitter Saturation Voltage (pulse test) IC = 300mA, IB = 30mA VCE(sat) - - 0.6 V VCE = 10 V, IC = 150 mA hFE(1) 85 - 340 VCE = 10 V, IC = 500 mA hFE(2) 40 - - fT - 200 - MHz COB - - 15 pF DC Current Gain (pulse test) Transition Frequency VCE = 10V, IC = 50mA, f = 200MHz Output Capacitance VCB = 10V, IE = 0, f = 1MHz CLASSIFICATION OF hFE1 Rank Range 01-June-2005 Rev. A 2SD602 2SD602A Q 85 - 170 85 - 170 R 120 - 240 120 - 240 S 170 - 340 170 - 340 Page 1 of 2 2SD602, 602A Elektronische Bauelemente NPN Plastic-Encapsulate Transistor CHARACTERISTIC CURVES 01-June-2005 Rev. A Page 2 of 2