BC327/BC328 PNP General PurposeTransistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES TO-92 Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : -0.8 A Collector-base voltage V(BR)CBO : BC327 -50 V 1 2 3 1 2 3 BC328 -30 Operating and storage junction temperature range 1. COLLECTOR T J ，T stg: -55℃ to +150℃ 2. BASE 3 . EMITTER . ELECTRICAL CHARACTERISTICS (Tamb=25Я unless otherwise specified) Parameter Symbol VCBO Collector-base breakdown voltage Test conditions MIN TYP MAX UNIT Ic= -100µA , IE=0 BC327 -50 V BC328 -30 V -45 V -25 V -5 V IC= -10 mA , IB=0 Collector-emitter breakdown voltage VCEO BC327 BC328 Emitter-base breakdown voltage VEBO Collector cut-off current ICBO IE= -10µA, IC=0 BC327 VCB= -45V, IE=0 -0.1 µA BC328 VCB= -25V, IE=0 -0.1 µA VCE= -40V, IB=0 -0.2 µA VCE= -20 V, IB=0 -0.2 µA IEBO VEB= -4 V, IC=0 -0.1 µA hFE(1) VCE=-1V, IC= -100mA 100 hFE(2) VCE=-1V, IC= -300mA 40 Collector-emitter saturation voltage VCE(sat) IC=-500 mA, IB= -50 mA -0.7 V Base-emitter saturation voltage VBE(sat) IC= -500 mA, IB=-50 mA -1.2 V Collector cut-off current ICEO BC327 BC328 Emitter cut-off current DC current gain fT Transition frequency VCE= -5V, IC= -10mA f = 100MHz 630 260 MHz hFE CLASSIFICATION Classification 16 25 40 hFE1 100-250 160-400 250-630 hFE2 60- 100- http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 170Any changing of specification will not be informed individual Page 1 of 3 BC327/BC328 PNP General PurposeTransistor Elektronische Bauelemente -20 IB= mA - 5.0 A I B = - 4.5m I B = 4.0mA A I B = - 3.5m A I B = - 3.0m A I B = - 2.5m mA IB = - 2.0 IB = -400 -300 IB .5m =-1 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT -500 A -200 PT = 60 0m IB = - 1.0mA W IB = - 0.5mA -100 -16 μA - 80 μA - 70 IB= μA - 60 IB= IB P -12 IB= μA - 40 IB = - -8 30μA 0μA IB = - 2 -4 IB = - 10μA IB = 0 IB = 0 -0 -1 -2 -3 -4 -5 -10 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE PULSE hFE, DC CURRENT GAIN V CE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -1000 -50 IC = 10 IB PULSE V CE(sat) -1 -0.1 V BE(sat) -0.01 -0.1 -1 -10 -100 -1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 1000 fT[MHz], GAIN-BANDWIDTH PRODUCT IC[mA], COLLECTOR CURRENT -40 -10 IC[mA], COLLECTOR CURRENT VCE = -1V PULSE -100 -10 -1 -0.1 -0.4 VCE = -5.0V 100 10 -0.5 -0.6 -0.7 -0.8 VBE[V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage http://www.SeCoSGmbH.com -30 Figure 2. Static Characteristic 1000 1 -0.1 -20 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 01-Jun-2002 Rev. A =6 00 mW T 0μA =-5 -0.9 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 6. Gain Bandwidth Product Any changing of specification will not be informed individual Page 2 of 3 BC327/BC328 PNP General PurposeTransistor Elektronische Bauelemente TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L ¶ e e1 Dimensions In Millimeters Symbol Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 4.700 0.169 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 01-Jun-2002 Rev. A 0.135 1.270TYP e http://www.SeCoSGmbH.com Dimensions In Inches 0.380 0.063 0.000 0.015 Any changing of specification will not be informed individual Page 3 of 3