SSG4424
13.8A, 30V,RDS(ON) 9mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
45
ruggedized device design, Ultra low on-resistance and cost-effectiveness.
o
0.375 REF
6.20
5.80
0.25
The SOP-8 is universally preferred for all commercial
3.80
4.00
industrial surface mount application and suited for low
voltage applications such as DC/DC converters.
1.27 Typ.
0.35
0.49
4.80
5.00
0.10 0.25
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Low on-resistance
D
D
D
D
* Simple drive requirement
8
7
6
5
* Fast switching Characteristic
Date Code
D
4424SC
G
1
2
3
4
S
S
S
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
1
Total Power Dissipation
Unit
30
V
±20
V
13.8
A
o
ID@TA=70 C
11
A
IDM
50
A
2.5
W
0.02
W/ C
ID@TA=25 C
o
PD@TA=25 C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Ratings
o
VGS
3
Pulsed Drain Current
Symbol
Tj, Tstg
o
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient 3
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
Rthj-a
Ratings
50
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSG4424
13.8A, 30V,RDS(ON) 9mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70 oC)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
BVDSS
30
_
_
V
BVDS/ Tj
_
0.02
_
V/ oC
VGS(th)
1.0
_
3.0
IGSS
_
_
_
_
_
_
IDSS
RDS(ON)
Max.
nA
VGS=± 20V
1
uA
VDS=30V,VGS=0
_
25
uA
VDS=24V,VGS=0
_
9
_
23
35
Gate-Source Charge
Qgs
_
6
_
Gate-Drain ("Miller") Charge
Qgd
15
_
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
13
_
Tr
_
9
_
Td(Off)
_
35
_
Tf
_
17
_
_
1920
3070
410
_
Output Capacitance
300
_
21
_
Coss
_
Crss
_
Forward Transconductance
Gfs
_
Gate Resistance
Rg
Reverse Transfer Capacitance
_
0.9
mΩ
VGS=10V, ID=13A
VGS=4.5V, ID=10A
14
Td(ON)
Ciss
Reference to 25 oC,ID=1mA
±100
Qg
_
VGS=0V, ID=250uA
VDS=VGS, ID=250uA
_
2
Test Condition
V
_
Total Gate Charge
Unit
nC
ID=10A
VDS=15V
VGS=5V
VDD=25V
ID=1A
nS
VGS=5V
RG=3.3 Ω
RD=25 Ω
_
pF
VGS=0V
VDS=15V
S
VDS=10V, ID=13A
Ω
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage2
Reverse Recovery Time
Symbol
VDS
2
Reverse Recovery Charge
Trr
Qrr
Min.
_
_
_
Typ.
_
33
26
Max.
1.2
_
_
Unit
Test Condition
V
IS=2.1A, VGS=0V.
nS
nC
Is=13A, VGS=0V
dl/dt=100A/uS
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 270 OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG4424
Elektronische Bauelemente
13.8A, 30V,RDS(ON) 9mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSG4424
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Circuit
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
13.8A, 30V,RDS(ON) 9mΩ
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4