SSG6618
7A, 30V,RDS(ON) 30mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
The SSG6618 provide the designer with the best combination of fast switching,
45
ruggedized device design, low on-resistance and cost-effectiveness.
o
0.375 REF
6.20
5.80
0.25
The SOP-8 is universally preferred for all commercial
industrial surface mount application and suited for low
3.80
4.00
voltage applications such as DC/DC converters.
1.27Typ.
0.35
0.49
4.80
5.00
0.100.25
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* Fast Switching Characteristic
D1
D1
D2
D2
* Simple Drive Requirement
8
7
6
5
* Low Gate Charge
Date Code
D
6618SC
G
1
2
3
4
S1
G1
S2
G2
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
Unit
VDS
30
V
±20
V
o
7
A
o
ID@TA=70 C
5.8
A
IDM
30
A
2.5
W
0.02
W/ C
VGS
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
Symbol
ID@TA=25 C
1
o
PD@TA=25 C
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
Symbol
Ratings
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
3
Max.
Rthj-a
50
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSG6618
7A, 30V,RDS(ON) 30mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
BVDSS
30
_
_
V
BVDS/ Tj
_
0.02
_
V/ oC
VGS(th)
1.0
_
3.0
IGSS
_
_
_
_
_
_
_
_
IDSS
RDS(ON)
±100
nA
VGS=± 20V
1
uA
VDS=30V,VGS=0
25
uA
VDS=24V,VGS=0
30
Qg
_
8.4
13
Gate-Source Charge
Qgs
_
2.1
_
Gate-Drain ("Miller") Charge
Qgd
4.7
_
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
_
_
6
_
Tr
_
5.2
_
Td(Off)
_
18.8
_
Tf
_
4.4
_
_
645
800
150
_
95
_
_
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Gfs
_
13
Symbol
Min.
Typ.
_
_
Forward Transconductance
mΩ
VGS=10V, ID=7A
VGS=4.5V, ID=5A
50
Td(ON)
Ciss
Reference to 25oC, ID=1mA
VDS=VGS, ID=250uA
_
2
VGS=0V, ID=250uA
V
_
Total Gate Charge
Test Condition
nC
ID=7A
VDS=24V
VGS=4.5V
VDD=15V
ID=1A
nS
VGS=10V
RG=3.3 Ω
RD=15 Ω
pF
VGS=0V
VDS=25V
_
S
VDS=10V, ID=7A
Max.
Unit
1.2
V
IS =2A , VGS=0V.
nS
IS =7A , VGS=0V.
dl/dt=100A/us
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage
2
VDS
2
Reverse Recovery Time
Reverse Recovery Charge
Trr
Qrr
_
_
16
10
_
_
nC
Test Condition
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board; 125OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG6618
7A, 30V,RDS(ON) 30mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 3 of 4
SSG6618
7A, 30V,RDS(ON) 30mΩ
Elektronische Bauelemente
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
N-Channel Enhancement Mode Power Mos.FET
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4