SSG9975
7.6A, 60V,RDS(ON) 21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
SOP-8
Description
0.19
0.25
0.40
0.90
The SSG9975 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
45
o
0.375 REF
6.20
5.80
0.25
3.80
4.00
1.27Typ.
0.35
0.49
4.80
5.00
0.10~0.25
o
0
o
8
Features
1.35
1.75
Dimensions in millimeters
* RoHS Compliant
* Lower On-Resistance
* High Breakdown Voltage
D1
D1
D2
D2
8
7
6
5
D1
Date Code
D2
9 975SS
G2
G1
1
2
3
4
S1
G1
S2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
3
Ratings
Unit
VDS
60
V
VGS
±25
V
7.6
A
ID@TA=70 C
6.1
A
IDM
30
A
2
W
o
ID@TA=25 C
Continuous Drain Current, VGS@10V
o
3
Continuous Drain Current, VGS@10V
Pulsed Drain Current
Symbol
1
o
PD@TA=25 C
Total Power Dissipation
0.016
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
o
W/ C
o
-55~+150
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbol
3
Max.
Rthj-a
Ratings
62.5
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 4
SSG9975
7.6A, 60V,RDS(ON) 21mΩ
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Static Drain-Source On-Resistance2
Symbol
Min.
Typ.
Max.
Unit
BVDSS
60
_
_
V
BVDS/ Tj
_
0.06
_
V/ oC
VGS(th)
1.0
_
3.0
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 25V
_
_
1
uA
VDS=60V,VGS=0
_
_
25
uA
VDS=48V,VGS=0
_
_
21
IDSS
RDS(ON)
_
_
27
Qg
_
26
40
Gate-Source Charge
Qgs
_
6
_
Gate-Drain ("Miller") Charge
Qgd
_
14
_
Td(ON)
_
14
_
Tr
_
7
_
Td(Off)
_
40
_
Tf
_
13
_
2320
3700
200
_
170
_
12
_
Total Gate Charge
2
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Forward Transconductance
_
_
Crss
_
Gfs
_
mΩ
Test Condition
VGS=0V, ID=250uA
Reference to 25oC, ID=1mA
VGS=10V, ID=7A
VGS=4.5V, ID=5A
nC
ID=7 A
VDS=48V
VGS=4.5 V
VDD=30V
ID=1A
nS
VGS=10V
RG=3.3Ω
RD=30 Ω
pF
VGS=0V
VDS= 25V
S
VDS=10V, ID=7A
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Reverse Recovery Time
2
Reverse Recovery Charge
Symbol
Min.
Typ.
VSD
_
_
Trr
_
Qrr
_
34
48
Max.
Unit
Test Condition
1.2
V
IS=1.7A, VGS=0V.
_
nS
_
nC
Is=7A, V GS=0V
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
3.Surface mounted on 1 inch2 copper pad of FR4 board;135 °C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 4
SSG9975
Elektronische Bauelemente
7.6A, 60V,RDS(ON) 21mΩ
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 3 of 4
SSG9975
Elektronische Bauelemente
7.6A, 60V,RDS(ON) 21mΩ
N-Channel Enhancement Mode Power Mos.FET
Description
GND
Typically a large storage capacitor is connected from this pin to ground to insure that the input
1.3V
or open= output enable.
tage does not sag below the minimum dropout voltage during the load
V higher than Vout in order for the device to
NC
Fig 7. Gate Charge Characteristics
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 4 of 4